摘要 :
For farmland, water bodies, villages and other areas in the Julu, Hebei, the inversion of GF-1 surface reflectance was carried out. Based on time-series remote sensing images, the Sentinel-2 satellite surface reflectance product w...
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For farmland, water bodies, villages and other areas in the Julu, Hebei, the inversion of GF-1 surface reflectance was carried out. Based on time-series remote sensing images, the Sentinel-2 satellite surface reflectance product was used to compare and verify the surface reflectance inversion results of the Gaofen-1 satellite. From February 2020 to January 2021, a total of 10 sets of valid images were acquired, with 5*5 pixels as a sample unit, and the test results of a total of 210 samples showed that the average absolute error of the reflectance is within 0.03 with the farmland, villages and other ground objects, and the average absolute error of the reflectance for the water body is within 0.055. In terms of correlation coefficients with Sentinel 2 data, the average correlation coefficient between farmland and villages was 0.999, and the correlation coefficient for water bodies was low, 0.158. This algorithm performs well in the target areas of farmland and villages, which is not suitable for water targets.
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摘要 :
The 16m spatial resolution of the Gaofen-1 satellite WFV camera (GF-1 WFV) has potential advantages in ground feature recognition. However, due to the lack of shortwave infrared channels, it is difficult to invert the ground surfa...
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The 16m spatial resolution of the Gaofen-1 satellite WFV camera (GF-1 WFV) has potential advantages in ground feature recognition. However, due to the lack of shortwave infrared channels, it is difficult to invert the ground surface reflectivity using the traditional dark pixel method. Taking GF-1 WFV apparent reflectance data and ground-based atmospheric data as input, an atmospheric correction algorithm based on the 6S radiation transmission model is constructed. In order to verify the accuracy of the algorithm, the inversion reflectance value of Dunhuang calibration site was compared and analyzed with the measured Gobi surface reflectance data. The results showed that the relative errors of the blue, green, red, and near-infrared bands were all within 6%; Comparing and analyzing the reflectance products of Sentinel-2 and GF-1 WFV, the results show that the relative errors of blue, green, red, and near-infrared bands are all within 4%.
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摘要 :
China's Anti-monopoly Law absorbs the advanced idea of anti-monopoly law in the world, which forbids monopoly behavior rather than monopoly structure. Two game models are built, one of which is between government and monopoly ente...
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China's Anti-monopoly Law absorbs the advanced idea of anti-monopoly law in the world, which forbids monopoly behavior rather than monopoly structure. Two game models are built, one of which is between government and monopoly enterprise, the other one of which is between injured enterprise and monopoly enterprise. The paper obtains that the probability of monopoly behavior is mainly affected by three variables: fines ratio in total sales revenue, the number of subjects participating in anti-monopoly and the multiple of compensation for the victims. Based on the definition and Junction of punitive damages, the paper proves the punitive damages encourage private participation of anti-monopoly, increase the probability to investigate, punish the monopoly behavior, create a strong deterrent effect, and then compensate for victims more fairly and more sufficiently. At the same time, the paper learns from the practice of anti-monopoly legislation in America and Japan, proves that the punitive damages to the anti-monopoly behavior have a positive impact on the effects of anti-monopoly, and puts forward China's Anti-monopoly Law should be set punitive damages system.
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摘要 :
Managing rapid increase in thermal power densities associated with device miniaturization is a major
technological challenge. Development of new efficient cooling technologies is therefore urgently required
for future progress i...
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Managing rapid increase in thermal power densities associated with device miniaturization is a major
technological challenge. Development of new efficient cooling technologies is therefore urgently required
for future progress in electronics. Solid-state cooling devices can be one answer, owing to their high
efficiency and compatibility for integration. To achieve efficient cooling, we have been working on
semiconductor double barrier heterostructures to utilize the thermionic cooling effect .
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摘要 :
Managing rapid increase in thermal power densities associated with device miniaturization is a major
technological challenge. Development of new efficient cooling technologies is therefore urgently required
for future progress in ...
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Managing rapid increase in thermal power densities associated with device miniaturization is a major
technological challenge. Development of new efficient cooling technologies is therefore urgently required
for future progress in electronics. Solid-state cooling devices can be one answer owing to their high efficiency
and possibility of integration. To achieve such an efficient cooling, we have been working on semiconductor
double barrier heterostructures to utilize the thermionic cooling effect.
收起
摘要 :
Managing rapid increase in thermal power densities associated with electronic miniaturization is a major technological challenge. Development of new efficient cooling technologies is therefore urgently required for future progress...
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Managing rapid increase in thermal power densities associated with electronic miniaturization is a major technological challenge. Development of new efficient cooling technologies is therefore urgently required for future progress in electronics. Solid-state cooling devices can be one answer for their high efficiency and possibility to be integrated. To achieve such an efficient cooling, we design a semiconductor refrigeration structure with thermionic cooling effect. Cooling is achieved when cold electrons absorb energy to participate in the thermionic emission process.
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摘要 :
Managing rapid increase in thermal power densities associated with device miniaturization is a major
technological challenge. Development of new efficient cooling technologies is therefore urgently required
for future progress i...
展开
Managing rapid increase in thermal power densities associated with device miniaturization is a major
technological challenge. Development of new efficient cooling technologies is therefore urgently required
for future progress in electronics. Solid-state cooling devices can be one answer, owing to their high
efficiency and compatibility for integration. To achieve efficient cooling, we have been working on
semiconductor double barrier heterostructures to utilize the thermionic cooling effect [1], as shown in Fig.
1(a). In the present heterostructure, cold electrons are first injected into the quantum well (QW) by resonant
tunneling through the thin barrier (emitter barrier). Subsequently, hot electrons are removed by thermionic
emission over the second thick barrier (collector barrier). This sequential two-step conduction process is
essential for the cooling effect. To quantitatively understand the conduction process, we have developed an
analytical theory to calculate the two-step current and compared it with experiment [2]. In this work, we have
considered not only the current flow but also the energy balance in the electron system in the QW: <(dE/dt)>=（-）/(τ_e)=P/n（1）Here, the cooling power P is calculated from the analytical theory [2], 𝑘_B the Boltzmann constant, 𝑇_e and
𝑇_l are the temperature of electron and lattice systems, respectively, 𝜏_e is the energy relaxation time, and 𝑛
is the density of electrons in the QW. The electron temperature in the QW can be calculated and compared
with experimental data.
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摘要 :
Managing rapid increase in thermal power densities associated with device miniaturization is a major
technological challenge. Development of new efficient cooling technologies is therefore urgently required
for future progress i...
展开
Managing rapid increase in thermal power densities associated with device miniaturization is a major
technological challenge. Development of new efficient cooling technologies is therefore urgently required
for future progress in electronics. Solid-state cooling devices can be one answer owing to their high efficiency
and possibility of integration. To achieve such an efficient cooling, we have been working on semiconductor
double barrier heterostructures to utilize the thermionic cooling effect.
收起
摘要 :
Managing rapid increase in thermal power densities associated with electronic miniaturization is a major technological challenge. Development of new efficient cooling technologies is therefore urgently required for future progress...
展开
Managing rapid increase in thermal power densities associated with electronic miniaturization is a major technological challenge. Development of new efficient cooling technologies is therefore urgently required for future progress in electronics. Solid-state cooling devices can be one answer for their high efficiency and possibility to be integrated. To achieve such an efficient cooling, we design a semiconductor refrigeration structure with thermionic cooling effect. Cooling is achieved when cold electrons absorb energy to participate in the thermionic emission process.
收起
摘要 :
Managing rapid increase in thermal power densities associated with device miniaturization is a major
technological challenge. Development of new efficient cooling technologies is therefore urgently required
for future progress i...
展开
Managing rapid increase in thermal power densities associated with device miniaturization is a major
technological challenge. Development of new efficient cooling technologies is therefore urgently required
for future progress in electronics. Solid-state cooling devices can be one answer, owing to their high
efficiency and compatibility for integration. To achieve efficient cooling, we have been working on
semiconductor double barrier heterostructures to utilize the thermionic cooling effect [1], as shown in Fig.
1(a). In the present heterostructure, cold electrons are first injected into the quantum well (QW) by resonant
tunneling through the thin barrier (emitter barrier). Subsequently, hot electrons are removed by thermionic
emission over the second thick barrier (collector barrier). This sequential two-step conduction process is
essential for the cooling effect. To quantitatively understand the conduction process, we have developed an
analytical theory to calculate the two-step current and compared it with experiment [2]. In this work, we have
considered not only the current flow but also the energy balance in the electron system in the QW: =-/𝜏_e=p/n Here, the cooling power P is calculated from analytical theory, 𝑘_b the Boltzmann constant, 𝑇_e and 𝑇_l
are the temperature of electron and lattice systems, respectively, 𝜏_e is the energy relaxation time, and 𝑛 is
the density of electrons in the QW. The electron temperature in the QW can be calculated and compared with
experimental data.
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